Photoluminescence Study of As Doped p-type HgCdTe Absorber for Infrared Detectors Operating in the Range up to 8 µm

نویسندگان

چکیده

Abstract A HgCdTe photodiode grown by chemical vapor deposition (MOCVD) on a GaAs substrate operating in the long-wave infrared (LWIR) range was characterized using photoluminescence (PL) measurements. At high temperatures, PL spectrum originates from free-carrier emission and might be fitted theoretical expression being product of density states Fermi–Dirac distribution. low consists multiple peaks that do not originate solely energy gap. Such spectra are unambiguous to interpret due prominence different optical transitions. Spectral response (SR) measurements were used determine gap ( E g ) extract band-to-band transition spectra. visible within band Gaussian To identify sources individual peaks, excitation power dependence analysis conducted. Band-to-band, free-to-bound, acceptor-bound exciton, defect-bound exciton transitions identified. mainly impurity-related, with shallow impurity levels estimated 6 meV 16 for donor acceptor, respectively, while deep-level impurities associated V Hg . The latter an about 78 does vary temperature. Its relative positions respect is 0.8 at 18 K 0.67 80 K.

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ژورنال

عنوان ژورنال: Journal of Electronic Materials

سال: 2023

ISSN: ['0361-5235', '1543-186X']

DOI: https://doi.org/10.1007/s11664-023-10516-5